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¨è ÀϽà : 2025³â 12¿ù 12ÀÏ(±Ý) 13:00 ~ 18:00
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¨ê ÁÖÃÖ : Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ(ÇöóÁ RF±â¼ú¿¬±¸È¸)
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12:30~ | Çà»ç µî·Ï | - |
13:00~13:10 | ¿¬±¸È¸ ȸÀå Àλ縻 | Á¤Áø¿í ±³¼ö (ÇѾç´ë/¿¬±¸È¸Àå) |
13:10~13:40 | µð½ºÇ÷¹ÀÌ ¹Ú¸· °ø¹ý ¹× ÇöóÁ ÀÀ¿ë ±â¼ú ÇöȲ | Çã¸í¼ö ¸¶½ºÅÍ (»ï¼ºµð½ºÇ÷¹ÀÌ) |
13:40~14:10 | TCAD-Driven Innovation in Plasma Process R&D | ±ÇÇüö TL (SKÇÏÀ̴нº) |
14:10~14:40 | AI prediction °ú À¯Áöº¸¼ö ÀÚµ¿È·Î ±¸ÇöÇÏ´Â ¹Ì·¡Çü ½º¸¶Æ®ÆÕ | ¹ÚÁØÈ« ´ëÇ¥ÀÌ»ç (·¥¸®¼Ä¡ÄÚ¸®¾Æ) |
14:40~15:00 | Break | - |
15:00~15:20 | ¹ÝµµÃ¼ ÁõÂø(CVD, ALD) °øÁ¤¿ë ¼¼¶ó¹Í È÷ÅÍÀÇ ±¸Á¶ ¹× ¿ªÇÒ | ÀåÂù¿í ¹Ú»ç (¹ÌÄÚ¼¼¶ó¹Í½º) |
15:20~15:40 | ÇöóÁ Àåºñ ¼³°è ¹× °øÁ¤ ÇØ¼®À» À§ÇÑ ½Ã¹Ä·¹ÀÌ¼Ç ±â¹ý°ú Àû¿ë »ç·Ê | À¯µ¿ÈÆ ÀÌ»ç (KWT¼Ö·ç¼Ç) |
15:40~16:00 | PEALD Multi-Gas pulsing Plasma Development by the advanced fast matching speed. | ½Åµ¿¿Á ¹Ú»ç (ASM) |
16:00~16:20 | CCP ÀåºñÀÇ ºñ¼±Çü sheath°¡ ÇöóÁ ±ÕÀϼº¿¡ ¹ÌÄ¡´Â ¿µÇâ | ÀÌÇØÁØ ±³¼ö (ºÎ»ê´ë) |
16:20~16:40 | Break | - |
16:40~17:00 | ¹ÝµµÃ¼ °øÁ¤¿ë ÇöóÁ Áø´Ü ±â¼ú | ¿À¼¼Áø ¼ö¼® (»ï¼ºÀüÀÚ) |
17:00~17:20 | ÀÚÀ² °øÁ¤À» À§ÇÑ ÇöóÁ Á¦¾î±â¼ú | Á¤Áø¿í ±³¼ö (ÇѾç´ë) |
17:20~17:40 | ECR plasma Etching Technology for Semiconductor Fabrication with Fine Pattern | À±±â¿µ CPO (È÷ŸġÇÏÀÌÅ×Å©ÄÚ¸®¾Æ) |
17:40~18:00 | ÇöóÁ Àåºñ Áö´Éȸ¦ À§ÇÑ ¼¾¼ ¼Ö·ç¼Ç | À±Á¤½Ä ´ÜÀå (Çѱ¹ÇÙÀ¶ÇÕ¿¡³ÊÁö¿¬±¸¿ø) |