½Ã °£ | ÁÖ Á¦ | ¿¬ »ç | ||
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12:30~ | Çà»ç µî·Ï | - | ||
13:00~13:10 | ¼Ò°³ ¹× ¿¬±¸È¸ ȸÀå Àλ縻 | Á¤Áø¿í ±³¼ö (¿¬±¸È¸ ȸÀå) |
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13:10~13:40 | ¹ÝµµÃ¼ ÀåºñÀÇ ÃֽŠRF Plasma ±â¼ú ¹× ¾ç»ê ³Á¦ | ÃÖ¸í¼ö ºÎ»çÀå (SKÇÏÀ̴нº) | ||
13:40~14:10 | ¹ÝµµÃ¼ °øÁ¤¿¡ Àû¿ëµÇ´Â ÇöóÁ ¼Ò½º ÇöȲ°ú ¹Ì·¡ | ¹è±ÙÈñ ¸¶½ºÅÍ (»ï¼ºÀüÀÚ) |
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14:10~14:40 | Development of PECVD Equipment for Low-k SiCOH and Back Side Film Deposition |
À̽¹« Àü¹« (Å×½º) |
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14:40~14:50 | Break | - | ||
14:50~15:20 | Plasma¿ë PowerÀÇ ÃֽŠÀÀ¿ë ±â¼ú | °½ÂÇÏ »ó¹« (AE Korea) | ||
15:20~15:50 | ÇöóÁ °øÁ¤Àåºñ¸¦ À§ÇÑ ÃֽŠRF Á¦¾î ±â¼ú | ±è¿µµµ ºÎÀå (·¥¸®¼Ä¡) |
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15:50~16:20 | °íÈ¿À² ICP ¶óµðÄ® ¼Ò½º ±â¼ú | ¾ö¼¼ÈÆ ´ëÇ¥ÀÌ»ç (ÀÎÅõÄÚ¾îÅ×Å©³î·ÎÁö) |
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16:20~16:30 | Break | - | ||
16:30~17:00 | Helical °øÁø ÇöóÁ ±â¼ú | Á¤Áø¿í ±³¼ö (ÇѾç´ë) |
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17:00~17:30 | ¶óµðÄÃ ÃøÁ¤À» À§ÇÑ ±¤Èí¼ö ºÐ¼® ±â¼ú | ¹®¼¼¿¬ ±³¼ö (ÀüºÏ´ë) |
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17:30~18:00 | °øÁ¤ ÇöóÁ ´ÜÃþ ÃÔ¿µÀ» À§ÇÑ Áø´Ü°ú ±â¼ú | ¹Ú»óÈÄ ±³¼ö (KAIST) |
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- | ¿¬±¸È¸ ¸¶¹«¸® Àλ縻 | Á¤Áø¿í ±³¼ö (ÇѾç´ë) |
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*»ó±â ÇÁ·Î±×·¥Àº »çÁ¤»ó ´Ù¼Ò º¯°æµÉ ¼ö ÀÖ½À´Ï´Ù.